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3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per module

NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...
EDN

IMEC’s DRAM program will explore transistor, capacitor limits

As mentioned in a previous post, the Flemish Interuniversity Microelectronics Consortium, IMEC, has decided to include the interests of DRAM and non-volatile memory designers in their 32nm half-pitch ...
Semiconductor Engineering

Will Monolithic 3D DRAM Happen?

As DRAM scaling slows, the industry will need to look for other ways to keep pushing for more and cheaper bits of memory. The most common way of escaping the limits of planar scaling is to add the ...
TweakTown

NEO Semiconductor's new 3D X-DRAM technology is groundbreaking 3D NAND-like DRAM

The company filed all relevant patent stuff with the United States Patent Application Publication on April 6, 2023, for what it's calling a 3D NAND-like DRAM cell array structure for memory. This new ...
Semiconductor Engineering

Baby Steps Toward 3D DRAM

Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
sciencex

Imec Demonstrates Capacitor-less IGZO-Based DRAM Cell With >400s Retention Time

This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...