Cree, Inc. and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs ...
Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...
SiC MOSFETs in solar and energy storage applications have clear benefits compared to silicon technologies, addressing the pressing need for energy and cost savings ...
Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...
MALVERN, Pa., Nov. 16, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced seven new MOSFET and diode power modules designed specifically for on-board charger ...
TOKYO, JAPAN / ACCESSWIRE / December 22, 2023 / Power Diamond Systems, Inc. (PDS, Tokyo, JAPAN, CEO Tatsuya Fujishima), a leading innovator in the research and development of diamond semiconductor ...
After decades of domination by silicon, silicon carbide (SiC) is replacing it as the gold standard in high-voltage power electronics, including in traction inverters at the heart of electric vehicles ...
Inverter gate driver optocouplers are ideally suited for IGBT and MOSFET applications for variable speed motor drives. Their high output peak currents, coupled with high voltage safety standards ...
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