The move builds on ROHM’s longstanding partnership with TSMC, through which the companies have already established an ...

Rohm has decided to combine its own development and manufacturing technologies for GaN power devices with TSMC’s process ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

At the same time, the semiconductor industry has been moving toward 200 mm (8-inch) wafers to improve manufacturing ...

GaN switches promise higher efficiency and higher power density in SMPS. This article discusses the readiness of this technology and its challenges, and provides an outlook on being a replacement for ...

NexGen Power Systems Inc. is fabricating vertical power devices (vertical gallium nitride, or vertical GaN) using homoepitaxial GaN on GaN substrates. Vertical GaN devices are capable of switching at ...

The collaboration merges ROHM’s device development expertise with TSMC’s advanced GaN-on-silicon technology. Credit: ROHM/Globenewswire. ROHM has entered a strategic partnership with Taiwan ...

DUBLIN--(BUSINESS WIRE)--The "GaN Power Devices - Global Strategic Business Report" has been added to ResearchAndMarkets.com's offering. The global market for GaN Power Devices was estimated at US$346 ...

Gallium nitride (GaN) is an ideal material for applications requiring high switching speeds and minimal power losses. While ...

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), the fabless semiconductor company that was spun out of the renowned power device group at the Engineering Department of the University ...

Infineon has introduced a new range of integrated 600 V GaN half‑bridge devices to simplify power system design.

Why do GaN and SiC devices need unique test equipment? Power semiconductors employing silicon carbide (SiC) and gallium nitride (GaN) have higher power density, smaller size, better high temperature ...